BLF277 Philips Semiconductors, BLF277 Datasheet - Page 6

• Manufacturer Part Number: BLF277
• Description: VHF power MOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in CW operation in a common source class-B test circuit.
Ruggedness in class-B operation
The BLF277 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:
V
September 1992
CW, class-B
handbook, halfpage
h
DS
VHF power MOS transistor
= 25 C; R
Class-B operation; V
Z
Fig.9
L
= 50 V; f = 175 MHz at rated load power.
(dB)
= 1.4
G p
25
20
15
10
5
0
MODE OF OPERATION
0
Power gain and efficiency as functions of
load power, typical values.
j1.6 ; f = 175 MHz.
th mb-h
50
DS
= 0.2 K/W; R
= 50 V; I
100
G p
D
DQ
= 0.1 A;
150
GS
= 16 ; unless otherwise specified.
200
P L (W)
MGP224
(MHz)
175
250
f
100
80
60
40
20
0
(%)
D
V
6
(V)
50
DS
handbook, halfpage
Class-B operation; V
Z
Fig.10 Load power as a function of input power,
L
(W)
P L
= 1.4
200
150
100
50
0
0
typical values.
j1.6 ; f = 175 MHz.
I
(A)
0.1
DQ
DS
2
= 50 V; I
150
(W)
DQ
P
4
L
= 0.1 A;
Product specification
typ. 17
(dB)
6
G
14
P IN (W)
p
BLF277
MGP225
8
typ. 58
(%)
50
D