BLF277 Philips Semiconductors, BLF277 Datasheet - Page 5
BLF277
Manufacturer Part Number
BLF277
Description
VHF power MOS transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BLF277.pdf
(13 pages)
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Philips Semiconductors
September 1992
handbook, halfpage
handbook, halfpage
VHF power MOS transistor
R DS(on)
I
Fig.6
V
Fig.8
D
GS
(pF)
( )
= 5 A; V
C rs
150
100
= 0; f = 1 MHz.
50
0.4
0.3
0.2
0.1
0
0
0
0
Drain-source on-state resistance as a
function of junction temperature, typical
values.
Feedback capacitance as a function of
drain-source voltage, typical values.
GS
= 10 V.
20
50
40
100
V DS (V)
T j ( C)
MGP223
MGP222
60
150
5
handbook, halfpage
(pF)
V
Fig.7
C
GS
1200
800
400
= 0; f = 1 MHz.
0
0
Input and output capacitance as functions
of drain-source voltage, typical values.
20
40
Product specification
C os
C is
V DS (V)
BLF277
MGE615
60