BLF277 Philips Semiconductors, BLF277 Datasheet - Page 3

• Manufacturer Part Number: BLF277
• Description: VHF power MOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
September 1992
handbook, halfpage
V
I
P
T
T
R
R
D
SYMBOL
V
stg
j
SYMBOL
DS
tot
th j-mb
th mb-h
VHF power MOS transistor
(1) Current in this area may be limited by R
(2) T
GS
10
10
(A)
I D
10
mb
1
2
1
1
= 25 C.
(1)
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
Fig.2 DC SOAR.
10
PARAMETER
PARAMETER
(2)
10
2
DS(on)
V DS (V)
.
MRA906
10
3
T
T
mb
mb
= 25 C; P
= 25 C; P
3
up to T
handbook, halfpage
(1) Continuous operation.
(2) Short-time operation during mismatch.
P tot
(W)
tot
tot
CONDITIONS
mb
300
200
100
= 220 W
= 220 W
CONDITIONS
Fig.3 Power/temperature derating curves.
0
= 25 C
0
50
(1)
(2)
MIN.
65
100
Product specification
RESISTANCE
T h ( C)
110
20
16
220
150
200
THERMAL
MAX.
0.8 K/W
0.2 K/W
BLF277
MGP219
150
V
V
A
W
C
C
UNIT