BLF277 Philips Semiconductors, BLF277 Datasheet - Page 4

• Manufacturer Part Number: BLF277
• Description: VHF power MOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
September 1992
V
I
I
V
g
R
I
C
C
C
handbook, halfpage
j
DSS
GSS
DSX
fs
V
SYMBOL
(BR)DSS
GS(th)
= 25 C unless otherwise specified.
DS(on)
is
os
rs
VHF power MOS transistor
(mV/K)
V
Fig.4
GS
T.C.
DS
= 10 V.
0
1
2
3
4
5
10
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
2
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
10
1
PARAMETER
1
I D (A)
MGP220
10
V
V
I
I
I
I
V
V
V
V
D
D
D
D
V
GS
GS
GS
GS
GS
GS
= 50 mA; V
= 50 mA; V
= 5 A; V
= 5 A; V
GS
= 0; I
= 0; V
= 10 V; V
= 0; V
= 0; V
= 0; V
= 20 V; V
4
D
CONDITIONS
handbook, halfpage
DS
DS
GS
DS
DS
DS
= 50 mA
V
Fig.5
= 50 V
= 10 V
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
DS
DS
= 10 V
DS
DS
DS
(A)
I D
= 10 V; T
= 10 V
= 10 V
= 10 V
30
20
10
0
= 0
0
Drain current as a function of gate-source
voltage, typical values.
j
= 25 C.
5
110
2
4.5
MIN.
6.2
0.2
25
480
190
14
TYP. MAX.
10
Product specification
V GS (V)
2.5
0.3
1
4.5
100
BLF277
MGP221
15
V
mA
V
mV
S
A
pF
pF
pF
A
UNIT