BLF225 Philips Semiconductors, BLF225 Datasheet - Page 6

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BLF225

Manufacturer Part Number
BLF225
Description
VHF power MOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in CW operation in a common source class-B test circuit.
Ruggedness in class-B- operation
The BLF225 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:
V
September 1992
handbook, halfpage
CW, class-B
MODE OF OPERATION
h
DS
VHF power MOS transistor
= 25 C; R
Class-B operation; V
f = 175 MHz.
Fig.9
= 15.5 V; f = 175 MHz at rated load power.
(dB)
G p
20
15
10
5
0
0
Power gain and efficiency as functions of
load power, typical values.
th mb-h
10
DS
= 0.3 K/W; unless otherwise specified.
= 12.5 V; I
20
DQ
G p
= 100 mA;
(MHz)
30
175
f
40
P L (W)
MGP124
12.5
V
(V)
50
DS
80
60
40
20
0
(%)
6
(mA)
100
I
handbook, halfpage
DQ
Class-B operation; V
f = 175 MHz.
Fig.10 Load power as a function of input power,
(W)
P L
50
40
30
20
10
0
0
typical values.
(W)
P
30
L
DS
= 12.5 V; I
4
typ. 9.5
DQ
(dB)
G
= 100 mA;
8.5
P
8
Product specification
P IN (W)
BLF225
MEA740
typ. 70
(%)
12
60
C

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