BLF225 Philips Semiconductors, BLF225 Datasheet - Page 4

• Manufacturer Part Number: BLF225
• Description: VHF power MOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
September 1992
handbook, halfpage
V
I
I
V
g
R
I
C
C
C
j
DSS
GSS
DSX
fs
(BR)DSS
GS(th)
= 25 C unless otherwise specified.
DS(on)
is
os
rs
VHF power MOS transistor
(mV/K)
V
Fig.4
T.C.
SYMBOL
DS
= 10 V.
10
6
4
0
4
2
2
6
2
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
10
1
PARAMETER
1
I D (A)
MEA741
10
V
V
I
I
I
V
V
V
V
D
D
D
V
GS
GS
GS
GS
GS
GS
= 30 mA; V
= 3.5 A; V
= 3.5 A; V
GS
4
= 0; I
= 0; V
= 15 V; V
= 0; V
= 0; V
= 0; V
= 20 V; V
handbook, halfpage
CONDITIONS
D
V
Fig.5
DS
DS
DS
DS
DS
= 30 mA
DS
GS
(A)
I D
= 10 V.
= 12.5 V
= 12.5 V; f = 1 MHz
= 12.5 V; f = 1 MHz
= 12.5 V; f = 1 MHz
20
15
10
DS
DS
5
0
DS
= 10 V
= 15 V
0
= 10 V
= 10 V
Drain current as a function of gate-source
voltage, typical values.
= 0
5
10
40
2
1.5
MIN.
2.2
0.25
16
120
140
20
TYP. MAX. UNIT
Product specification
15
V GS (V)
BLF225
1
1
4.5
0.35
MRA244
20
V
mA
V
S
A
pF
pF
pF
A