BLF225 Philips Semiconductors, BLF225 Datasheet - Page 2

• Manufacturer Part Number: BLF225
• Description: VHF power MOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT123
QUICK REFERENCE DATA
RF performance at T
September 1992
CW, class-B
PIN
Easy power control
Good thermal stability
Withstands full load mismatch.
VHF power MOS transistor
1
2
3
4
MODE OF OPERATION
drain
source
gate
source
DESCRIPTION
h
= 25 C in a common source test circuit.
k, halfpage
PIN CONFIGURATION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
(MHz)
175
f
1
2
2
12.5
V
(V)
DS
Fig.1 Simplified outline and symbol.
MSB057
4
3
WARNING
CAUTION
(W)
P
30
L
g
MBB072
(dB)
G
8.5
p
Product specification
d
s
BLF225
(%)
60
D