BLF225 Philips Semiconductors, BLF225 Datasheet - Page 5

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BLF225

Manufacturer Part Number
BLF225
Description
VHF power MOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
September 1992
handbook, halfpage
handbook, halfpage
VHF power MOS transistor
R DS(on)
V
I
Fig.6
V
Fig.8
D
GS
GS
(pF)
C rs
= 3.5 A.
( )
= 15 V;
= 0; f = 1 MHz.
60
50
40
30
20
10
0
0.5
0.4
0.3
0.2
0.1
0
0
Drain-source on-state resistance as a
function of junction temperature, typical
values.
Feedback capacitance as a function of
drain-source voltage, typical values.
0
4
50
8
100
12
V DS (V)
T j ( C)
MRA242
MGP123
16
150
5
handbook, halfpage
V
Fig.7
GS
(pF)
600
400
200
C
= 0; f = 1 MHz.
0
0
Input and output capacitance as functions
of drain-source voltage, typical values.
C os
C is
4
8
Product specification
12
V DS (V)
BLF225
MEA739
16

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