NE5500179A NEC, NE5500179A Datasheet - Page 5

• Manufacturer Part Number: NE5500179A
• Description: SILICON POWER MOS FET
• Manufacturer: NEC

30
25
20
15
10
30
25
20
15
10
30
25
20
15
10
5
0
5
5
–5
0
OUTPUT POWER, DRAIN CURRENT
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
vs. GATE TO SOURCE VOLTAGE
V
I
f = 850 MHz
V
I
f = 2.45 GHz
Dset
Dset
DS
DS
= 3.5 V
= 3.0 V
= 100 mA
= 100 mA
0
5
Gate to Source Voltage V
1.0
Input Power P
Input Power P
P
I
out
10
D
5
2.0
10
15
P
I
in
in
out
D
(dBm)
(dBm)
15
20
V
f = 460 MHz
P
DS
in
P
3.0
GS
I
out
D
= 15 dBm
= 4.5 V
(V)
20
25
Data Sheet PU10118EJ01V1DS
4.0
25
30
600
500
400
300
200
100
0
500
400
300
200
100
0
500
400
300
200
100
0
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
100
100
100
50
50
50
0
0
0
–5
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
V
I
f = 850 MHz
V
I
f = 2.45 GHz
Dset
Dset
V
f = 460 GHz
P
DS
DS
DS
in
= 3.5 V
= 3.0 V
= 100 mA
= 100 mA
= 15 dBm
= 4.5 V
0
5
Gate to Source Voltage V
1.0
Input Power P
Input Power P
10
5
2.0
10
15
add
d
in
in
d
add
(dBm)
(dBm)
15
20
add
3.0
GS
NE5500179A
d
(V)
20
25
4.0
25
30
5