NE5500179A NEC, NE5500179A Datasheet - Page 2

• Manufacturer Part Number: NE5500179A
• Description: SILICON POWER MOS FET
• Manufacturer: NEC

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ABSOLUTE MAXIMUM RATINGS (T
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS (T
2
Gate to Source Leak Current
Saturated Drain Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Transconductance
Drain to Source Breakdown Voltage
Thermal Resistance
Linear Gain
Output Power
Operating Current
Power Added Efficiency
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current (Pulse Test)
Total Power Dissipation
Channel Temperature
Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Drain Current (Pulse Test)
Input Power
Note Duty Cycle
Notes 1. Peak measurement at Duty Cycle
2. DC performance is 100% testing. RF performance is testing several samples per wafer.
Parameter
Wafer rejection criteria for standard devices is 1 reject for several samples.
Parameter
Parameter
50%, T
on
1 s
Symbol
Symbol
Symbol
I
V
D
BV
V
P
T
T
V
I
I
P
GSO
I
V
GSO
V
R
G
Note
DSS
g
I
P
DS
D
stg
tot
ch
GSO
I
op
add
out
m
DS
D
th
th
L
in
DS
A
A
= +25 C)
V
V
V
V
I
Channel to Case
f = 1.9 GHz, P
V
f = 1.9 GHz, P
V
Duty Cycle
f = 1.9 GHz, V
= +25 C)
DSS
Data Sheet PU10118EJ01V1DS
GSS
DSS
DS
DS
DS
DS
50%, T
= 4.8 V, I
= 4.8 V, I
= 4.8 V, I
= 4.8 V, I
= 10 A
= 5.0 V
= 8.5 V
65 to +125
Ratings
Test Conditions
Test Conditions
on
0.25
125
8.5
5.0
0.5
10
DS
DS
Dset
Dset
50%, T
in
in
DS
= 1 mA
= 250 mA
= 10 dBm,
= 20 dBm,
1 s.
= 200 mA, Note 1, 2
= 200 mA, Note 1, 2
= 4.8 V
on
1 s
Unit
W
V
V
A
A
C
C
MIN.
MIN.
28.5
3.0
1.0
20
48
0
0
TYP.
TYP.
1.45
14.0
30.0
340
420
340
4.8
2.0
20
24
10
55
MAX.
MAX.
NE5500179A
100
100
6.0
3.5
2.0
22
dBm
dBm
Unit
Unit
C/W
mA
mS
mA
nA
nA
dB
%
V
V
V
V