UPA805T NEC, UPA805T Datasheet

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UPA805T

Manufacturer Part Number
UPA805T
Description
6-pin small MM high-frequency double transistor
Manufacturer
NEC
Datasheet
Document No. ID-3639
Date Published April 1995 P
Printed in Japan
(O.D. No. ID-9146)
FEATURES
• Low Noise, High Gain
• Operable at Low Voltage
• Small Feed-back Capacitance
• Built-in 2 Transistors (2
ORDERING INFORMATION
Remark If you require an evaluation sample, please contact an NEC
ABSOLUTE MAXIMUM RATINGS (T
Note 110 mW must not be exceeded in 1 element.
PART NUMBER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
PA805T-T1
C
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
PA805T
re
= 0.3 pF TYP.
PARAMETER
Sales Representative. (Unit sample quantity is 50 pcs.)
Loose products
(50 PCS)
Taping products
(3 KPCS/Reel)
QUANTITY
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The information in this document is subject to change without notice.
NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER
PRELIMINARY DATA SHEET
2SC4958)
SYMBOL
V
V
V
T
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
P
T
CBO
CEO
EBO
I
stg
C
T
j
A
60 in 1 element
120 in 2 elements
= 25 C)
PACKING STYLE
–65 to +150
RATING
150
10
9
6
2
Note
UNIT
mW
mA
˚C
˚C
V
V
V
SILICON TRANSISTOR
PIN CONFIGURATION (Top View)
PACKAGE DRAWINGS
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
PA805T
Q
6
1
1
1.25±0.1
2.1±0.1
5
2
©
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
(Unit: mm)
4
Q
3
2
1995

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UPA805T Summary of contents

Page 1

... PART NUMBER QUANTITY PA805T Loose products (50 PCS) PA805T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (T PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current ...

Page 2

... Insertion Power Gain | Noise Figure NF h Ratio FE1 FE2 Notes 1. Pulse Measurement Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. h CLASSIFICATION FE Rank KB Marking T82 h Value 75 to 150 FE TYPICAL CHARACTERISTICS (T A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 ...

Page 3

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 0 Collector Current I (mA) C NOISE FIGURE vs. ...

Page 4

S-PARAMETERS mA S11 GHz MAG ANG 0.200 0.9410 –9.3 0.200 0.9280 –17.7 0.600 0.8670 –26.0 0.800 0.8150 –33.6 1.000 0.7280 –41.5 1.200 0.6700 –47.3 1.400 0.5970 ...

Page 5

PA805T 5 ...

Page 6

... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance ...

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