NE5500179A NEC, NE5500179A Datasheet
NE5500179A
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NE5500179A Summary of contents
Page 1
... FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6 m WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0 dBm output power with 55% power added efficiency at 1 ...
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... GHz dBm 4 200 mA, Note Dset 1.9 GHz dBm, out 4 200 mA, Note Dset add 50 Data Sheet PU10118EJ01V1DS NE5500179A MIN. TYP. MAX. Unit 3.0 4.8 6 2.0 3.5 V 340 dBm MIN. ...
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... DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE 100 500 1.9 GHz dBm in 400 300 50 200 100 0 4.0 0 1.0 (V) Gate to Source Voltage V Data Sheet PU10118EJ01V1DS NE5500179A 2.0 2.5 3.0 ( add Input Power P (dBm add 2.0 3.0 4.0 ( ...
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... Gate to Source Voltage V DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. INPUT POWER 500 100 100 mA Dset f = 460 MHz 400 300 50 200 100 –5 0 Data Sheet PU10118EJ01V1DS NE5500179A d add Input Power P (dBm add 2.0 3.0 4.0 ( add ...
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... Input Power P DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. INPUT POWER 500 100 100 mA Dset f = 2.45 GHz 400 300 50 200 100 Input Power P Data Sheet PU10118EJ01V1DS NE5500179A d add 2.0 3.0 4.0 ( add (dBm add (dBm ...
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... 0.0 1.0 2.0 3.0 Gate to Source Voltage V GS Remark The graphs indicate nominal characteristics. 6 DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. GATE TO SOURCE VOLTAGE 100 500 2.45 GHz dBm in 400 300 50 200 100 0 4.0 0 1.0 (V) Gate to Source Voltage V Data Sheet PU10118EJ01V1DS NE5500179A d add 2.0 3.0 4.0 (V) GS ...
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... S MAG = S S MSG = 4 100 mA dBm) Dset in Note ( ) TBD Data Sheet PU10118EJ01V1DS NE5500179A Note Note MAG MSG ANG 0.517 85.0 26.8 0.00 0.569 120.7 23.9 0.06 0.598 136.5 22.1 0.08 0.618 144.8 21.0 0.11 0.641 149.5 20.1 0.13 0.660 153.4 19.3 0.18 0.681 156.2 18 ...
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... PACKAGE DIMENSIONS 79A (UNIT: mm) 4.2 MAX. Source Gate 0.4±0.15 5.7 MAX. 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) Gate 8 (Bottom View) 1.5±0.2 Source Gate Drain 3.6±0.2 4.0 1.7 Source Stop up the hole with a rosin or something to avoid solder flow. Drain Through Hole: 0.2 × 33 0.5 0.5 6.1 Data Sheet PU10118EJ01V1DS NE5500179A Drain 0.8 MAX. ...
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... C or below : seconds : seconds : 3 times : 0.2%(Wt.) or below : 260 C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350 C or below : 3 seconds or less : 0.2%(Wt.) or below Data Sheet PU10118EJ01V1DS NE5500179A For soldering Condition Symbol IR260 VP215 WS260 HS350-P3 9 ...
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... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). 10 Please check with an NEC sales representative for Data Sheet PU10118EJ01V1DS NE5500179A The M8E 00 0110 ...
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... TEL: +49-211-6503-101 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Technical issue NEC Compound Semiconductor Devices, Ltd. Sales Engineering Group, Sales Division E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918 FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-528-0302 http://www.nec.de/ http://www.csd-nec.com/ NE5500179A 0110 ...