MT16LSDF3264LHY-10E Micron, MT16LSDF3264LHY-10E Datasheet - Page 10

• Manufacturer Part Number: MT16LSDF3264LHY-10E
• Description: DRAM Module, 256MB, 512MB (x64, DR) 144Pin SDRAM SODIMM
• Manufacturer: Micron

operation or incompatibility with future versions may
result.
Operating Mode
M7 and M8 to zero; the other combinations of values
for M7 and M8 are reserved for future use and/or test
modes. The programmed burst length applies to both
READ and WRITE bursts.
because unknown operation or incompatibility with
future versions may result.
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. D 9/04 EN
Reserved states should not be used as unknown
The normal operating mode is selected by setting
Test modes and reserved states should not be used
10
Write Burst Mode
M2 applies to both READ and WRITE bursts; when
M9 = 1, the programmed burst length applies to READ
bursts, but write accesses are single-location (non-
burst) accesses.
Table 8:
When M9 = 0, the burst length programmed via M0-
SPEED
-13E
-133
-10E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
144-PIN SDRAM SODIMM
256MB, 512MB (x64, DR)
CAS Latency Table
CAS LATENCY = 2
CLOCK FREQUENCY (MHz)
≤ 133
≤ 100
≤ 100
ALLOWABLE OPERATING
©2004 Micron Technology, Inc. All rights reserved.
CAS LATENCY = 3
< 143
< 133
≤ NA