IDT72V275L10TF8 IDT, Integrated Device Technology Inc, IDT72V275L10TF8 Datasheet - Page 5

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IDT72V275L10TF8

Manufacturer Part Number
IDT72V275L10TF8
Description
IC FIFO SS 32768X18 10NS 64STQFP
Manufacturer
IDT, Integrated Device Technology Inc
Series
72Vr
Datasheet

Specifications of IDT72V275L10TF8

Function
Synchronous
Memory Size
589K (32K x 18)
Access Time
10ns
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
64-STQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Data Rate
-
Other names
72V275L10TF8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT72V275L10TF8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
DC ELECTRICAL CHARACTERISTICS
(Commercial: V
CAPACITANCE
NOTES:
1. With output deselected, (OE ≥ ≥ ≥ ≥ ≥ V
2. Characterized values, not currently tested.
NOTES
1.
2. Measurements with 0.4 ≤ V
3. OE ≥ V
4. Tested with outputs open (I
5. RCLK and WCLK toggle at 20 MHz and data inputs switch at 10 MHz.
6. Typical I
7. All Inputs = V
ABSOLUTE MAXIMUM RATINGS
IDT72V275/72V285 3.3V CMOS SUPERSYNC FIFO
32,768 x 18 and 65,536 x 18
Symbol
C
C
Symbol
V
T
I
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Symbol
I
I
V
V
I
I
= capacitive load (in pF).
IN
OUT
OUT
Industrial temperature range product for the 15ns is available as a standard device.
LI
LO
CC1
CC2
STG
TERM
OH
OL
(2)
(2)
(3)
(1,2)
(4,5,6)
(4,7)
:
IH,
CC1
0.4 ≤ V
= 11 + 1.65*f
CC
Parameter
Input
Capacitance
Output
Capacitance
CC
Input Leakage Current
Output Leakage Current
Output Logic “1” Voltage, I
Output Logic “0” Voltage, I
Active Power Supply Current
Standby Current
- 0.2V or GND + 0.2V, except RCLK and WCLK, which toggle at 20 MHz.
Terminal Voltage
with respect to GND
Storage
Temperature
DC Output Current
= 3.3V ± 0.3V, T
OUT
≤ V
(1)
S
Rating
CC.
OUT
IN
+ 0.02*C
≤ V
(T
= 0).
IH
A
).
CC
= +25
Conditions
V
V
L
.
*f
A
IN
OUT
S
= 0
= 0V
(in mA) with V
o
= 0V
C, f = 1.0MHz)
o
OH
OL
C to +70
Parameter
= 8 mA
= –2 mA
–0.5 to +4.6
–55 to +125
–50 to +50
Commercial
o
CC
C; Industrial: V
TM
= 3.3V, t
Max.
10
10
A
= 25
CC =
mA
Unit
° C
Unit
pF
pF
o
V
C, f
3.3V ± 0.3V, TA = -40°C to +85°C)
S
= WCLK frequency = RCLK frequency (in MHz, using TTL levels), data switching at f
5
RECOMMENDED DC OPERATING
CONDITIONS
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
Symbol
V
GND
V
V
T
T
A
A
CC
IH
IL
(1)
Supply Voltage(Com’l & Ind’l)
Supply Voltage(Com’l & Ind’l)
Input High Voltage
(Com’l & Ind’l)
Input Low Voltage
(Com’l & Ind’l)
Operating Temperature
Commercial
Operating Temperature
Industrial
Min.
–10
Parameter
2.4
–1
t
CLK
Com’’l & Ind’l
IDT72V275L
IDT72V285L
= 10, 15, 20 ns
COMMERCIAL AND INDUSTRIAL
(1)
Min.
3.0
2.0
-40
0
0
Max.
0.4
10
60
20
1
TEMPERATURE RANGES
Typ.
3.3
0
V
CC
Max.
3.6
0.8
70
85
0
+ 0.5
Unit
mA
mA
µ A
µA
V
V
S
°C
o
Unit
V
V
V
V
/2, C
C
L

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