PSMN004-36P NXP Semiconductors, PSMN004-36P Datasheet - Page 8

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PSMN004-36P

Manufacturer Part Number
PSMN004-36P
Description
N-channel enhancement mode field-effect transistor
Manufacturer
NXP Semiconductors
Datasheet

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PSMN004-36P
Manufacturer:
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Product data
Fig 12. Source (diode forward) current as a function of
T
j
= 25 C and 175 C; V
(A)
I S
source-drain (diode forward) voltage; typical
values.
80
60
40
20
0
0
V GS = 0 V
0.4
175 ºC
GS
= 0 V
0.8
T j = 25 ºC
V SD (V)
03ag48
1.2
Rev. 01 — 19 November 2001
N-channel enhancement mode field-effect transistor
Fig 13. Gate-source voltage as a function of gate
I
D
= 75 A; V
V GS
(V)
charge; typical values.
10
8
6
4
2
0
0
I D = 75 A
V DD = 15 V
T j = 25 ºC
DD
PSMN004-36P/36B
= 15 V
40
80
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
120
160
Q G (nC)
03ag50
200
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