PSMN004-36P NXP Semiconductors, PSMN004-36P Datasheet - Page 5

• Manufacturer Part Number: PSMN004-36P
• Description: N-channel enhancement mode field-effect transistor
• Manufacturer: NXP Semiconductors

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Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 08621
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
SD
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
turn-on rise time
turn-off delay time
turn-off fall time
source-drain (diode forward) voltage I
source-drain (diode forward) voltage I
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
V
V
V
I
V
V
resistive load
I
Rev. 01 — 19 November 2001
D
D
D
S
S
S
DS
GS
GS
GS
GS
GS
DD
T
T
T
T
T
T
T
T
T
T
T
= 25 A; V
= 75 A; V
= 20 A; dI
= 0.25 mA; V
= 1 mA; V
= 75 A; V
j
j
j
j
j
j
j
j
j
j
j
= 4.5 V; I
= 10 V; I
= 30 V; V
= 10 V; V
= 5 V; I
= 0 V; V
= 15 V; R
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 25 C
= 175 C
= 25 C
= 25 C
D
GS
GS
DD
S
DS
DS
D
/dt = 100 A/ s; V
D
= 25 A;
GS
D
N-channel enhancement mode field-effect transistor
= 25 A;
= 0 V;
= 0 V;
= 15 V; V
DS
= 25 A;
= V
= 20 V; f = 1 MHz;
GS
= 1.2 ; V
= 0 V
= 0 V
= 0 V
GS
;
Figure 12
Figure 12
Figure 7
Figure 7
Figure 9
Figure 7
GS
GS
= 5 V;
= 5 V; R
and
GS
and
PSMN004-36P/36B
and
Figure 13
Figure 11
= 0 V
8
8
8
G
= 6 ;
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Min
36
32
1
0.5
Typ
1.5
0.05
1
4
3.5
97
20
39
6000
1700
1400
45
220
435
320
0.85
1.1
400
1
Max
2.3
10
500
100
5
9.25
5.4
4
1.2
5 of 13
Unit
V
V
V
V
V
nA
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
ns
A
A
C