PSMN004-36P NXP Semiconductors, PSMN004-36P Datasheet - Page 2

• Manufacturer Part Number: PSMN004-36P
• Description: N-channel enhancement mode field-effect transistor
• Manufacturer: NXP Semiconductors

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5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 08621
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
D
DM
S
SM
AS
DS
tot
j
DS
DGR
GS
GSM
tot
stg
j
AS
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
non-repetitive avalanche energy
non-repetitive avalanche current
Quick reference data
Limiting values
Conditions
T
T
T
V
V
Conditions
T
T
t
duty cycle 25 %; T
T
T
T
T
unclamped inductive load;
I
R
unclamped inductive load;
V
starting T
Rev. 01 — 19 November 2001
p
D
j
mb
mb
j
j
mb
mb
mb
mb
mb
mb
GS
GS
DD
GS
= 25 to 175 C
= 25 to 175 C
= 25 to 175 C; R
= 75 A; t
50 s; pulsed;
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; I
= 15 V; R
= 50 ; V
= 5 V; I
j
= 25 C
p
D
= 0.1 ms; V
D
Figure 1
GS
N-channel enhancement mode field-effect transistor
= 25 A; T
GS
GS
= 25 A; T
GS
GS
= 50 ; V
= 5V; starting T
= 5 V
= 5 V;
j
= 5 V;
GS
150 C
p
p
= 20 k
j
j
DD
= 25 C
Figure 2
= 25 C
10 s;
10 s
Figure 2
GS
= 15 V;
= 5V;
PSMN004-36P/36B
Figure 3
j
and
= 25 C;
3
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Typ
3.5
4
Min
55
55
Max
36
75
230
175
4
5
Max
36
36
75
75
240
230
+175
+175
75
240
120
75
15
20
2 of 13
Unit
V
A
W
m
m
Unit
V
V
V
V
A
A
A
W
A
A
mJ
A
C
C
C