HAT3021R Renesas Technology, HAT3021R Datasheet - Page 8

• Manufacturer Part Number: HAT3021R
• Description: Silicon N/P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

HAT3021R
Rev.2.00, Oct.06.2004, page 8 of 10
–100
100
500
400
300
200
100
–20
–40
–60
–80
-25
50
20
10
–0.1
0
0
Static Drain to Source on State Resistance
0
Pulse Test
V
V
DS
Reverse Drain Current
GS
Dynamic Input Characteristics
0
10 V
Case Temperature
Body-Drain Diode Reverse
= 4.5 V
–0.3
4
Gate Charge
V
DD
25
Recovery Time
vs. Temperature
= –50 V
V
I
D
DD
–25 V
–10 V
8
50
= –0.5 A, –1 A
di / dt = –100 A / s
V
= –50 V
–0.5 A, –1 A, –2 A
–1
GS
–25 V
–10 V
75 100 125 150
= 0, Ta = 25 C
12
Qg (nC)
Tc
–3
I
I
DR
D
16
= –2.6 A
( C)
(A)
–2 A
V
GS
–10
20
0
–4
–8
–12
–16
–20
0.05
0.02
0.01
10000
0.5
0.1
5000
2000
1000
0.2
10
100
500
200
100
5
2
1
50
10
20
50
20
10
–0.1
5
2
0
1
0
V
f = 1 MHz
Forward Transfer Admittance vs.
–0.03 –0.1 –0.3
GS
Drain to Source Voltage V
75 C
–10
= 0
Switching Characteristics
Tc = –25 C
Drain Current
Typical Capacitance vs.
Drain to Source Voltage
Drain Current
Drain Current
V
Rg = 4.7 , duty
25 C
t d(off)
GS
t d(on)
–20
= –10 V, V
–1
t r
–30
–1
I
D
V
Pulse Test
I
D
DS
DS
(A)
(A)
= 10 V
–40
= –30 V
–3
DS
1 %
Coss
Ciss
Crss
t f
(V)
–10
–50
–10