HAT3021R Renesas Technology, HAT3021R Datasheet - Page 3

• Manufacturer Part Number: HAT3021R
• Description: Silicon N/P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

HAT3021R
• P Channel
Drain to source breakdown
voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Rev.2.00, Oct.06.2004, page 3 of 10
Item
Symbol
V
V
V
R
R
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
Qgd
Qgs
t
t
I
I
|y
V
GS(off)
DS(on)
DS(on)
Qg
d(on)
d(off)
GSS
DSS
t
t
t
DF
rr
fs
r
f
|
–1.0
Min
–80
±20
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–0.83
Typ
165
200
930
3.3
2.1
2.4
5.5
90
56
16
20
12
40
30
—
—
—
—
—
–1.08
Max
–2.5
±10
210
290
–1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
V
I
I
I
V
V
f = 1MHz
V
V
I
V
V
R
R
IF = –2.6 A, V
IF = –2.6 A, V
diF/ dt =100A/µs
D
G
D
D
D
D
GS
DS
DS
DS
GS
DD
GS
GS
DD
L
g
= –10 mA, V
= ±100 A, V
= –1.3 A, V
= –1.3 A, V
= –1.3 A, V
= -2.6 A
= 23.0
= 4.7
= –80 V, V
= –10 V, I
= –10 V
= ±16 V, V
= 0
= –25 V
= –10 V
= –10 V, I
–30 V
Test Conditions
GS
GS
DS
GS
GS
D
GS
DS
GS
D
DS
= –1.3 A
= –10 V
= –10 V
= – 4.5 V
= –1 mA
= 0
= 0
= 0
= 0
= 0
= 0
Note4
Note4
Note4
Note4