HAT3021R Renesas Technology, HAT3021R Datasheet - Page 7

• Manufacturer Part Number: HAT3021R
• Description: Silicon N/P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

HAT3021R
Rev.2.00, Oct.06.2004, page 7 of 10
P Channel
–1000
–800
–600
–400
–200
–5.0
–2.5
4.0
3.0
2.0
1.0
0
0
0
Drain to Source Saturation Voltage vs
Test Condition :
Power vs. Temperature Derating
Drain to Source Voltage V
Gate to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Ambient Temperature
Typical Output Characteristics
-4.5 V
–4
-10 V
Gate to Source Voltage
50
–8
100
–5
–12
V
Pulse Test
Pulse Test
150
Ta ( C)
GS
V
I
–16
D
DS
GS
= -2.8 V
= –2 A
–0.5 A
-3.0 V
–1 A
(V)
(V)
–20
200
–10
0.001
0.01
100
1000
0.1
10
–5
–4
–3
–2
–1
100
10
1
Static Drain to Source on State Resistance
0.1
0
–0.1
Operation in
this area is
limited by R
Ta = 25 C
1 shot Pulse
Note 4 :
Pulse Test
V
Drain to Source Voltage V
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
Gate to Source Voltage
Maximum Safe Operation Area
GS
–2
= –4.5 V
Drain Current
–10 V
vs. Drain Current
DS(on)
1
25 C
–4
Tc = 75 C
25 C
–1
–6
I
10
D
V
Pulse Test
DS
(A)
V
–8
DS
= 10 V
GS
10 s
(V)
(V)
100
–10
–10