HAT3021R Renesas Technology, HAT3021R Datasheet - Page 6

• Manufacturer Part Number: HAT3021R
• Description: Silicon N/P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

HAT3021R
Rev.2.00, Oct.06.2004, page 6 of 10
0.0001
0.001
0.01
0.1
10
10
1
Switching Time Test Circuit
Vin
10 V
Vin Monitor
Rg
D = 1
100
Normalized Transient Thermal Impedance vs. Pulse Width
D.U.T.
1 m
10
5
0
R
Source to Drain Voltage
V
= 30 V
10 m
L
DS
Vout
Monitor
0.4
Reverse Drain Current vs.
Source to Drain Voltage
10 V
Pulse Width PW (S)
5 V
100 m
0.8
V
1.2
GS
1
td(on)
When using the glass epoxy board
(FR4 40x40x1.6 mm)
P
Vout
= 0 V, –5 V
Vin
ch - f(t) = s (t) x ch - f
ch - f = 125 C/W, Ta = 25 C
DM
Pulse Test
V
1.6
Switching Time Waveform
SD
10
10%
(V)
10%
2.0
PW
T
90%
tr
100
td(off)
D =
1000
90%
PW
T
90%
10000
10%
t
f