SI6955 Fairchild Semiconductor, SI6955 Datasheet - Page 4

• Manufacturer Part Number: SI6955
• Description: Dual 30V P-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
0.01
10
100
0.1
8
6
4
2
0
10
Figure 9. Maximum Safe Operating Area.
1
0.001
0
Figure 7. Gate Charge Characteristics.
0.1
0.01
0.1
I
0.0001
D
R
SINGLE PULSE
1
R
= -3.6A
DS(ON)
θJA
V
T
GS
A
= 125
= 25
= -10V
LIMIT
D = 0.5
o
o
C/W
C
1.6
0.2
-V
0.05
0.1
0.02
DS
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
SINGLE PULSE
1
g
, GATE CHARGE (nC)
0.001
DC
3.2
1s
100ms
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
V
DS
10ms
= -5V
10
1ms
0.01
100 µ s
4.8
-15V
10 µ s
-10V
6.4
100
0.1
400
300
200
100
50
40
30
20
10
0
0.001
0
0
Figure 8. Capacitance Characteristics.
C
RSS
Figure 10. Single Pulse Maximum
1
0.01
6
-V
DS
Power Dissipation.
C
OSS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
12
t
1
, TIME (sec)
C
1
ISS
P(pk)
Duty Cycle, D = t
18
T
R
J
R
θJA
- T
10
θJA
(t) = r(t) * R
100
A
= 125
t
1
= P * R
SINGLE PULSE
R
t
2
θJA
T
24
A
= 125°C/W
o
100
C/W
= 25°C
Si6955DQ Rev C(W)
θJA
f = 1 MHz
V
θJA
1
GS
(t)
/ t
= 0 V
2
1000
1000
30