SI6923 Fairchild Semiconductor, SI6923 Datasheet

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SI6923

Manufacturer Part Number
SI6923
Description
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
Manufacturer
Fairchild Semiconductor
Datasheet

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Si6923DQ
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process.
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution for
asynchronous DC/DC converter applications.
Applications
2001 Fairchild Semiconductor Corporation
MOSFET Absolute Maximum Ratings
Symbol
V
V
I
P
T
Schottky Maximum Ratings
V
I
I
Thermal Characteristics
R
Package Marking and Ordering Information
D
F
FM
DC/DC conversion
J
DSS
GSS
D
RRM
, T
JA
Device Marking
STG
6923
TSSOP-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
MOSFET Power Dissipation (minimum pad)
Schottky Power Dissipation (minimum pad)
Operating and Storage Junction Temperature Range
Repetitive Peak Reverse Voltage
Average Forward Current
Peak Forward Current
Thermal Resistance, Junction-to-Ambient
(minimum pad)
It is combined with a low
– Continuous
– Pulsed
Si6923DQ
Device
Parameter
Pin 1
Reel Size
13’’
(Note 1)
(Note 1)
(Note 1)
(Note 1)
T
A
Features
=25
–3.5 A, –20 V. R
V
High performance trench technology for extremely
low R
Low profile TSSOP-8 package
o
C unless otherwise noted
F
< 0.55 V @ 1 A
DS(ON)
5
6
7
8
Tape width
MOSFET: 115
Schottky: 130
R
16mm
-55 to +150
DS(ON)
DS(ON)
Ratings
1.2
1.0
1.5
20
30
3.5
20
30
12
= 0.045
= 0.075
@ V
@ V
4
3
2
1
April 2001
GS
GS
Si6923DQ Rev. A(W)
3000 units
Quantity
= –4.5 V
= –2.5 V
Units
C/W
W
V
V
A
V
A
A
C

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SI6923 Summary of contents

Page 1

... Ratings – – 3.5 (Note 1) – 30 1.2 (Note 1) 1.0 (Note 1) -55 to +150 20 1.5 30 MOSFET: 115 Schottky: 130 (Note 1) Reel Size Tape width 13’’ 16mm April 2001 @ V = –4 –2 Units C/W Quantity 3000 units Si6923DQ Rev. A(W) ...

Page 2

... Typ Max Units –20 V –16 mV/ C –1 A –100 nA 100 nA –0.6 –1.0 –1 mV –15 A 13.2 S 1015 pF 446 pF 118 9 2.2 nC 2.4 nC –1.25 A –0.6 –1.2 V 100 nA 0 0.48 0.55 V 0.42 0. Si6923DQ Rev. A (W) ...

Page 3

... Source Current and Temperature. = -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -1. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Si6923DQ Rev. A (W) 5 1.4 ...

Page 4

... RSS DRAIN TO SOURCE VOLTAGE ( 125 REV ERSE V OLTA ( 135 °C/W JA P(pk ( Duty Cycle 100 1000 Si6923DQ Rev ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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