SI5517DU Vishay Siliconix, SI5517DU Datasheet - Page 8

• Manufacturer Part Number: SI5517DU
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si5517DU
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.30
0.25
0.20
0.15
0.10
0.05
15
12
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
9
6
3
0
0.0
0
0
V
GS
4.5 V
3.5 V
I
4 V
D
V
= 5 V
0.5
= 4.6 A
GS
3
V
= 1.8 V
3
DS
Q
Output Characteristics
V
g
- Drain-to-Source Voltage (V)
DS
1.0
- Total Gate Charge (nC)
I
D
= 10 V
Gate Charge
- Drain Current (A)
6
V
1.5
DS
6
3 V
= 16 V
9
2.5 V
2.0
V
GS
V
9
GS
= 2.5 V
12
= 4.5 V
2.5
1.5 V
2 V
1 V
12
3.0
15
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
800
600
400
200
5
4
3
2
1
0
- 50
0
0.0
0
I
On-Resistance vs. Junction Temperature
V
D
GS
- 25
C
= 3.3 A
rss
= 4.5 V
4
V
T
V
0.5
GS
0
J
Transfer Characteristics
T
DS
- Junction Temperature ( °C)
C
- Gate-to-Source Voltage (V)
T
- Drain-to-Source Voltage (V)
= 25 °C
C
25
= 125 °C
Capacitance
8
50
1.0
C
C
S-81449-Rev. B, 23-Jun-08
oss
Document Number: 73529
iss
12
75
T
C
100
= - 55 °C
1.5
16
125
150
2.0
20
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