SI5517DU Vishay Siliconix, SI5517DU Datasheet - Page 5

• Manufacturer Part Number: SI5517DU
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

www.DataSheet.co.kr
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73529
S-81449-Rev. B, 23-Jun-08
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
20
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
50
0.6
T
J
I
D
= 150 °C
75
= 250 µA
0.8
0.01
100
0.1
100
10
T
1
0.1
J
= 25 °C
I
D(on)
* V
1.0
Safe Operating Area, Junction-to-Ambient
125
Limited by R
GS
limited
>
V
150
minimum V
1.2
DS
- Drain-to-Source Voltage (V)
DS(on)
Single Pulse
1
T
A
BVDSS limited
GS
= 25 °C
*
at which R
I
DM
limited
10
DS(on)
0.08
0.07
0.06
0.05
0.04
0.03
40
30
20
10
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
1 s
10 s
100 ms
100 µs
10 ms
DC
Single Pulse Power, Junction-to-Ambient
1 ms
0.01
1
100
V
GS
25 °C
- Gate-to-Source Voltage (V)
0.1
2
Time (s)
Vishay Siliconix
1
125 °C
3
Si5517DU
10
www.vishay.com
I
D
4
= 4.4 A
100
600
5
5
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