SI5517DU Vishay Siliconix, SI5517DU Datasheet - Page 4

• Manufacturer Part Number: SI5517DU
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si5517DU
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
20
16
12
On-Resistance vs. Drain Current and Gate Voltage
8
4
0
8
6
4
2
0
0.0
0
0
I
D
0.5
= 4.4 A
4
V
DS
3
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
DS
1.0
- Total Gate Charge (nC)
I
D
V
= 10 V
Gate Charge
- Drain Current (A)
V
GS
V
8
GS
GS
= 2.5 V thru 5 V
V
= 2 V
DS
1.5
= 2.5 V
6
= 16 V
12
V
2.0
GS
V
= 4.5 V
V
9
GS
V
GS
V
GS
16
GS
= 1.8 V
2.5
= 2.5 V
= 1.5 V
= 1 V
3.0
20
12
1.6
1.4
1.2
1.0
0.8
0.6
10
800
600
400
200
8
6
4
2
0
- 50
0.0
0
0
On-Resistance vs. Junction Temperature
C
- 25
V
I
rss
D
GS
= 4.4 A
0.3
= 4.5 V
V
4
V
GS
T
0
Transfer Characteristics
DS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
0.6
8
T
25 °C
50
C
C
C
S-81449-Rev. B, 23-Jun-08
oss
Document Number: 73529
iss
= 125 °C
0.9
12
75
100
1.2
- 55 °C
16
125
150
1.5
20
Datasheet pdf - http://www.DataSheet4U.net/