SI3948 Fairchild Semiconductor, SI3948 Datasheet

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SI3948

Manufacturer Part Number
SI3948
Description
Dual N-Channel Logic Level PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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Absolute Maximum Ratings
Symbol Parameter
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 2001 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
SI3948DV
These N-Channel
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for all applications where
small size is desireable but especially low cost DC/DC
conversion in battery powered systems.
General Description
,T
Dual N-Channel Logic Level PowerTrench MOSFET
JA
JC
STG
SOT-23
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D1
S1
TM
- Pulsed
SuperSOT
Logic
D2
pin 1
TM
Level
-6
G1
T
A
S2
MOSFETs are
= 25°C unless otherwise note
SuperSOT
G2
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
(Note 1c)
TM
-8
2.5 A, 30 V. R
Very fast switching.
Low gate charge (2.1nC typical).
SuperSOT
standard SO-8); low profile (1mm thick).
Features
SO-8
TM
-6 package: small footprint (72% smaller than
R
6
5
4
DS(ON)
DS(ON)
-55 to 150
Ratings
0.96
±20
130
2.5
0.9
0.7
30
10
60
= 0.095
= 0.145
SOT-223
@ V
@ V
GS
GS
= 10 V
= 4.5 V
2
3
1
SOIC-16
SI3948DV Rev.A
April 2001
Units
°C/W
°C/W
W
°C
V
V
A

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SI3948 Summary of contents

Page 1

... A (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) April 2001 = 0.095 @ DS(ON 0.145 @ V = 4.5 V DS(ON package: small footprint (72% smaller than SOIC-16 SOT-223 Ratings 30 ±20 2.5 10 0.96 0.9 0.7 -55 to 150 130 60 SI3948DV Rev.A Units °C °C/W °C/W ...

Page 2

... T = 125 C 0.122 0.152 J 0.113 0.145 10 5 220 2.3 3.2 0.7 1 0.9 1.3 0.75 0.78 1.2 (Note pad 180 C minimum pad. SI3948DV Rev.A Units V o mV/ C µA µ mV guaranteed ...

Page 3

... Drain Current and Gate Voltage 1. 125° 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C A 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. SI3948DV Rev 1.4 ...

Page 4

... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =180°C 25° 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 180 °C P(pk ( Duty Cycle 100 300 SI3948DV Rev.A 30 300 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...

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