SI3590DV Vishay Siliconix, SI3590DV Datasheet - Page 4

• Manufacturer Part Number: SI3590DV
• Description: N- and P-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si3590DV
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-0.0
-0.2
-0.4
-0.6
0.1
0.4
0.2
10
1
0.00
-50
-25
Source-Drain Diode Forward Voltage
T
J
V
= 150_C
0.3
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
I
D
J
= 250 mA
- Temperature (_C)
25
0.6
50
0.9
T
75
J
= 25_C
100
1.2
0.01
100
0.1
10
1
0.1
125
Safe Operating Area, Junction-to-Case
r
Limited
1.5
150
DS(on)
I
D(on)
V
New Product
DS
Limited
Single Pulse
T
- Drain-to-Source Voltage (V)
C
1
= 25_C
BV
DSS
Limited
I
DM
10
Limited
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100 ms
1 ms
10 ms
100 ms
10 s, 1 s
dc
I
D
1
V
100
= 3 A
GS
0.1
- Gate-to-Source Voltage (V)
Time (sec)
2
S-21979—Rev. A, 04-Nov-02
1
3
Document Number: 72032
N−CHANNEL
4
10
5
30