SI3590DV Vishay Siliconix, SI3590DV Datasheet - Page 3

• Manufacturer Part Number: SI3590DV
• Description: N- and P-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 72032
S-21979—Rev. A, 04-Nov-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.5
0.4
0.3
0.2
0.1
0.0
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0
0
0
V
I
D
DS
= 2 A
On-Resistance vs. Drain Current
1
V
= 15 V
2
1
DS
V
V
Q
GS
Output Characteristics
GS
g
- Drain-to-Source Voltage (V)
I
= 5 thru 2.5 V
D
- Total Gate Charge (nC)
= 2.5 V
- Drain Current (A)
Gate Charge
2
4
2
1.5 V
3
6
3
2 V
V
GS
4
8
4
= 4.5 V
10
5
5
New Product
450
360
270
180
1.8
1.6
1.4
1.2
1.0
0.8
0.6
90
8
7
6
5
4
3
2
1
0
0
-50
0.0
0
On-Resistance vs. Junction Temperature
C
-25
rss
0.5
V
V
6
GS
DS
T
Transfer Characteristics
J
V
I
0
D
GS
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
= 3 A
1.0
= 4.5 V
25_C
25
Capacitance
T
12
C
C
oss
= 125_C
Vishay Siliconix
C
1.5
50
iss
18
75
2.0
N−CHANNEL
Si3590DV
-55 _C
100
www.vishay.com
24
2.5
125
150
3.0
30
3