IDT72T6480 Integrated Device Technology, IDT72T6480 Datasheet - Page 28

• Manufacturer Part Number: IDT72T6480
• Description: X48 Sequential Flow-control Device Up To 1gigabit
• Manufacturer: Integrated Device Technology

General DC Test Conditions
NOTES
1. These parameters are compliant under JEDEC standard for SSTL_2 (JESD8-9A). These parameters are classified as SSTL_2 Class I output buffers under section 3.2.1 of
2. I
3. I
4. V
5. The maximum value may not represent the maximum current dissipated from the SFC. I
DC ELECTRICAL CHARACTERISTICS
(Commercial: V
POWER CONSUMPTION
IDT72T6480 2.5V, SEQUENTIAL FLOW-CONTROL DEVICE
x12, x24, x48 BIT WIDE CONFIGURATION
SFC Input
(LVTTL)
SFC Output
(LVTTL)
DDR SDRAM
I/O (SSTL_2)
Symbol
I
I
I
I
I
JESD8-9A.
capacitive load, frequency, bus-width, and output switching characteristics. For calculating I
assistance.
I/O Type
CC1
CC2
CC3
SB1
SB2
CC
SB
•
•
•
•
SDREF
(2)
(2)
(2)
(3)
(3)
(active current) is measured with MCLK = 33.3MHz, RCLK = WCLK = 16.7MHz, and alternate 101010 data pattern toggling on the outputs.
(standby current) is measured with MCLK = RCLK = WCLK = 0MHz with no output data toggling.
:
Outputs are unloaded (I
Measurements taken with V
0.4 < V
Data toggles alternately at 1/2 WCLK and RCLK frequency
is the V
(1)
IN
< V
REF
CC
Active V
Active AV
Active V
Standby V
Standby V
CC
I
V
V
I
V
V
I
I
I
I
V
V
V
V
Symbol
= 2.5V ± 0.125V, T
LI
LO
OH
OL
OH
OL
of the DDR SDRAM. It is not to be confused with the V
IH
IL
OH
OL
IH
IL
OH
OL
, 0.4 < V
CC
DDQ
CC
DDQ
CC
current
OUT
current
OUT
current
current
current
= 0)
Input leakage current
Input High Voltage
Input Low Voltage
Output leakage current
Read/Write interface output logic “1” voltage with I
Read/Write interface output logic “0” voltage with I
Read/Write interface output high current (source current)
Read/Write interface output low current (sink current)
Memory interface output high current (source current)
Memory interface output low current (sink current)
Memory Interface Input High Voltage
Memory Interface Input Low Voltage
Memory Interface Output High Voltage
Memory Interface Output Low Voltage
CC
< V
= 2.625V, OE = HIGH, WCLK = RCLK = 16.7MHz, MCLK = 33.3MHz
CC
A
Parameter
= 0°C to +70°C;Industrial: V
Parameter
REF
CC
of the SFC.
= 2.5V ± 0.125V, T
OH1
OL1
28
Min.
—
—
—
—
—
CC
CC
values are dependent upon various factors that include: V
V
V
V
V
V
V
V
V
V
V
V
V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
with specific parameters, please contact IDT technical support for
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
= 3.3V
= 2.5V
A
= -40°C to +85°C)
Max.
650
600
18
1
1
V
V
DDQ
DDQ
Min.
-0.3
-7.6
-0.3
-10
2.0
1.7
-10
7.6
1.7
1.5
—
—
—
—
-2
-8
mA
mA
mA
mA
mA
8
8
Unit
– 0.4
– 0.4
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
Max.
3.45
1.00
5.5
0.8
0.7
0.4
0.4
3.0
0.7
10
10
—
—
—
—
—
—
—
—
—
OCTOBER 10, 2005
CC
, temperature,
Unit
mA
µA
µA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
V
V