IDT71P72804 Integrated Device Technology, IDT71P72804 Datasheet - Page 7

• Manufacturer Part Number: IDT71P72804
• Description: 1.8v 1m X 18 Qdr Ii Pipelined Sram
• Manufacturer: Integrated Device Technology

Absolute Maximum Ratings
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
2. VDDQ must not exceed VDD during normal operation.
NOTES:
1) All byte write (BWx) signals are sampled on
2) The availability of the BWx on designated devices is de
3) The QDRII Burst of two SRAM has data forwarding. A read request
Write Descriptions
71P72804 (1M x 18-Bit) 71P72604 (512K x 36-Bit)
18 Mb QDR II SRAM Burst of 2
I
V
V
V
V
T
T
Signal
OUT
Write Byte 0
Write Byte 1
Write Byte 2
Write Byte 3
Symbol
BIAS
STG
address will produce the newly written data in response to the read
TERM
TERM
TERM
TERM
request.
the rising edge of K and again on K. The data that is present on the
data bus in the designated byte will be latched into the input if
sample the first byte of the two word burst and the rising edge
of K will sample the second byte of the two word burst.
scribed in the pin description table.
that is initiated on the same cycle as a write request to the same
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
the corresponding BWx is held low. The rising edge of K will
Supply Voltage on V
Respect to GND
Supply Voltage on V
Respect to GND
respect to GND.
Storage Temperature
Continuous Current into Outputs
Voltage on Input terminals with
Voltage on Output and I/O
terminals with respect to GND.
Temperature Under Bias
Rating
BW
X
X
X
L
DD
DDQ
0
with
with
(1,2,3)
BW
X
X
X
L
1
-0.5 to V
–0.5 to V
–0.5 to V
–0.5 to +2.9
–55 to +125
–65 to +150
Value
BW
+ 20
X
X
X
L
DDQ
(1) (2)
DD
DD
2
+0.3
+0.3
+0.3
6109 tbl 09
6109 tbl 05
BW
X
X
X
L
Unit
mA
°C
°C
V
V
V
V
3
6.42
7
NOTE:
1. Tested at characterization and retested after any design or process
NOTE:
1. During production testing, the case temperature equals the ambient
Capacitance (TA = +25°C, f = 1.0MHz)
Recommended DC Operating and
Temperature Conditions
Symbol
Symbol
temperature.
V
V
change that may affect these parameters.
V
V
C
T
DDQ
REF
C
C
DD
SS
CLK
A
IN
O
Power Supply Voltage
I/O Supply Voltage
Ground
Input Reference Voltage
Ambient
Temperature
Input Capacitance
Clock Input Capacitance
Output Capacitance
Commercial and IndustrialTemperature Range
Parameter
Parameter
(1)
Commercial
Industrial
V
Conditions
V
DDQ
DD
Min.
0.68
1.7
1.4
0
= 1.8V
= 1.5V
-40 to +85
0 to +70
V
Typ.
DDQ
1.8
1.5
0
/2
Max.
(1)
5
6
7
Max.
0.95
V
1.9
0
DD
6109 tbl 06
6109 tbl 04
Unit
Unit
pF
pF
pF
V
V
V
o
o
V
c
c