SUD10P06-280L Vishay Siliconix, SUD10P06-280L Datasheet - Page 2

• Manufacturer Part Number: SUD10P06-280L
• Description: P-Channel MOSFET
• Manufacturer: Vishay Siliconix

SUD/SUU10P06-280L
Vishay Siliconix
Notes:
a.
b.
c.
www.vishay.com S FaxBack 408-970-5600
2-2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Pulsed Current
Forward Voltage
Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Independent of operating temperature.
c
c
b
Parameter
c
c
b
b
b
J
=25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
(BR)DSS
I
DS(on)
t
t
I
C
GS(th)
I
C
V
D(on)
C
Q
Q
d(off)
GSS
d(on)
I
DSS
DSS
g
Q
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
g
C
I
V
D
D
V
V
V
V
DS
DS
V
= 25_C)
DS
DS
] 10 A, V
GS
GS
DS
= –30 V, V
= –60 V, V
= –60 V, V
= –10 V, I
= –10 V, I
I
= –25 V, V
V
V
F
V
V
V
V
V
V
V
DS
DS
= 10 A, di/dt = 100 A/ms
DS
V
GS
DS
I
Test Condition
GS
DS
DD
DD
F
DS
= V
= –5 V, V
= 10 A, V
= 0 V, I
= –60 V, V
= –4.5 V, I
= –10 V, I
= –15 V, I
= –30 V, R
= –30 V, R
a
= 0 V, V
GEN
GEN
GS
D
D
GS
GS
GS
GS
GS
, I
= –5 A, T
= –5 A, T
= –10 V, R
D
= –10 V, I
D
= 0 V, T
= 0 V, T
GS
= 0 V, f = 1 MHz
= –250 mA
GS
= –250 mA
GS
D
D
D
GS
L
L
= –10 V
= –5 A
= –5 A
= 0 V
= –2 A
= "20 V
= 3 W
= 3 W
= 0 V
J
J
J
J
= 125_C
= 175_C
D
D
G
G
= 125_C
= 175_C
= –10 A
= 2.5 W
Min
–1.0
–60
–10
Typ
0.130
0.210
–2.0
11.5
635
100
3.5
30
16
17
19
50
6
2
9
a
S-20349—Rev. F, 18-Apr-02
Document Number: 70780
"100
Max
0.170
0.375
0.280
–150
–3.0
0.31
–1.3
–50
–20
–1
25
20
20
30
35
80
Unit
nA
mA
m
pF
nC
ns
ns
V
A
W
W
S
A
V