SUD10P06-280L-E3 Siliconix / Vishay, SUD10P06-280L-E3 Datasheet
SUD10P06-280L-E3
Manufacturer Part Number
SUD10P06-280L-E3
Description
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.13Ohm; ID -10A; TO-252; PD 37W; VGS +/-20V
Manufacturer
Siliconix / Vishay
Datasheet
1.SUD10P06-280L-E3.pdf
(2 pages)
Specifications of SUD10P06-280L-E3
Current, Drain
-10 A
Gate Charge, Total
11.5 nC
Package Type
TO-252
Polarization
P-Channel
Power Dissipation
37 W
Resistance, Drain To Source On
0.13 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
17 ns
Time, Turn-on Delay
9 ns
Transconductance, Forward
6 S
Voltage, Breakdown, Drain To Source
-60 V
Voltage, Forward, Diode
-1.3 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Notes:
a. Surface Mounted on FR4 board.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
V
DS
- 60
Ordering Information: SUD10P06-280L-E3 (Lead (Pb)-free)
(V)
P-Channel 60-V (D-S), 175 °C MOSFET, Logic Level
a
0.280 at V
0.170 at V
G
Top View
TO-252
R
D
DS(on)
J
= 150 °C)
S
GS
GS
Drain Connected to Tab
= - 4.5 V
(Ω)
= - 10 V
FR4 Board Mount
C
I
= 25 °C, unless otherwise noted
T
D
T
L = 0.1 mH
T
- 10
T
- 8
C
C
C
A
Free Air
(A)
= 100 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• 175 °C Rated Maximum Junction Temperature
Symbol
Symbol
T
R
R
J
V
E
I
I
P
, T
DM
thJC
I
I
AS
thJA
GS
D
AS
S
D
stg
®
Power MOSFETs
Typical
120
3.7
60
G
- 55 to 175
P-Channel MOSFET
Limit
± 20
- 10
- 20
- 10
- 10
- 7
37
2
5
a
SUD10P06-280L
Maximum
S
D
140
Vishay Siliconix
4.0
70
°C/W
Unit
Unit
mJ
°C
W
RoHS
V
A
COMPLIANT
1
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SUD10P06-280L-E3 Summary of contents
Page 1
... 0.280 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD10P06-280L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...
Page 2
... SUD10P06-280L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...