SUD10P06-280L Vishay Siliconix, SUD10P06-280L Datasheet

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SUD10P06-280L

Manufacturer Part Number
SUD10P06-280L
Description
P-Channel MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Part Number:
SUD10P06-280L
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Part Number:
SUD10P06-280L
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Part Number:
SUD10P06-280L
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Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70780
S-20349—Rev. F, 18-Apr-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
V
Surface Mounted on FR4 Board.
DS
–60
(V)
SUD10P06-280L
Order Number:
G
Top View
TO-252
D
P-Channel 60-V (D-S), 175_C MOSFET, Logic Level
a
S
J
0.280 @ V
0.170 @ V
= 150_C)
Drain Connected to Tab
r
DS(on)
_
Parameter
Parameter
GS
GS
(W)
= –4.5 V
= –10 V
C
= 25_C UNLESS OTHERWISE NOTED)
I
D
SUU10P06-280L
–10
Order Number:
–8
G
(A)
TO-251
Top View
FR4 Board Mount
T
D
L = 0.1 mH
T
T
T
C
Free Air
C
C
A
= 100_C
= 25_C
= 25_C
= 25_C
S
and DRAIN-TAB
Symbol
Symbol
T
R
R
J
V
E
I
I
P
, T
DM
thJA
thJC
I
I
AR
GS
AR
D
S
D
stg
SUD/SUU10P06-280L
G
Typical
120
P-Channel MOSFET
3.7
60
–55 to 175
Vishay Siliconix
Limit
"20
–10
–20
–10
–10
S
D
–7
37
2
5
a
Maximum
140
4.0
70
www.vishay.com
Unit
_C/W
Unit
C/W
mJ
_C
W
V
A
2-1

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SUD10P06-280L Summary of contents

Page 1

... GS –60 0.280 @ V = –4 TO-252 Drain Connected to Tab Top View Order Number: SUD10P06-280L ABSOLUTE MAXIMUM RATINGS (T Parameter Gate-Source Voltage _ Continuous Drain Current (T = 150_C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Maximum Power Dissipation ...

Page 2

... SUD/SUU10P06-280L Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...

Page 3

... 1 –55_C C 0.9 25_C 0.6 125_C 0.3 0 iss SUD/SUU10P06-280L Vishay Siliconix Transfer Characteristics T = 125_C C 25_C –55_C – Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current – Drain Current (A) D ...

Page 4

... SUD/SUU10P06-280L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0.0 –50 – – Junction Temperature (_C) J THERMAL RATINGS Drain Current vs. Case Temperature 100 T – Case Temperature (_C) C Normalized Thermal Transient Impedance, Junction-to-Case ...

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