MMBT3906-NL Fairchild Semiconductor, MMBT3906-NL Datasheet

MMBT3906-NL

Manufacturer Part Number

MMBT3906-NL

Description

2n3906/mmbt3906/pzt3906 Pnp General Purpose Amplifier

Manufacturer

Fairchild Semiconductor

Datasheet

1.MMBT3906-NL.pdf (6 pages)

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2001 Fairchild Semiconductor Corporation

Symbol

CEO

CBO

EBO

Thermal Characteristics

, T

PNP General Purpose Amplifier

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

This device is designed for general purpose amplifier and switching

applications at collector currents of 10 A to 100 mA.

Absolute Maximum Ratings*

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm

stg

2N3906

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

Derate above 25 C

TO-92

Characteristic

Parameter

MMBT3906

= 25°C unless otherwise noted

SOT-23

Mark: 2A

= 25°C unless otherwise noted

2N3906

83.3

625

200

5.0

*MMBT3906

Max

350

357

2.8

-55 to +150

Value

PZT3906

SOT-223

200

5.0

**PZT3906

1,000

2N3906/MMBT3906/PZT3906, Rev A

125

8.0

Units

mW/ C

Units

C/W

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MMBT3906-NL Summary of contents

Page 1

... Fairchild Semiconductor Corporation MMBT3906 SOT-23 Mark 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A 2N3906 625 5.0 83.3 200 PZT3906 SOT-223 Value Units 5.0 V 200 mA -55 to +150 C Max Units *MMBT3906 **PZT3906 350 1,000 mW 2.8 8.0 mW/ C C/W 357 125 C 2N3906/MMBT3906/PZT3906, Rev A ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current BL I Collector Cutoff Current CEX ON CHARACTERISTICS h DC Current Gain * FE V ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 250 125 °C 200 150 25 °C 100 - 40 °C 50 0.1 0.2 0 COLLECTOR CURRE NT (mA) C Base-Emitter Saturation Voltage vs Collector ...

Page 4

Typical Characteristics Noise Figure vs Frequency 100 1.0 mA 100 0 FREQUENCY (kHz) Switching Times ...

Page 5

Typical Characteristics Voltage Feedback Ratio 100 COLLECTOR CURRENT (mA) C Output Admittance 1000 100 10 0 COLLECTOR CURRENT (mA) C PNP General Purpose Amplifier (continued 0.1 0 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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