T4312816A Taiwan Memory Technology, T4312816A Datasheet - Page 4

• Manufacturer Part Number: T4312816A
• Description: 8M x 16 SDRAM
• Manufacturer: Taiwan Memory Technology

ABSOLUTE MAXIMUM RATINGS
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
RECOMMENDED DC OPERATING CONDITIONS
(T
Note : 1. Any input 0V
CAPACITANCE
(T
TM Technology Inc. reserves the right
to change products or specifications without notice.
Parameter
Voltage on Any Pin Relative To Vss
Supply Voltage Relative To Vss
Short circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
RAS,CAS,WE,CS,CKE,LDQM,
Output logic high voltage
Output logic low voltage
A
A
Output leakage current
Input leakage current
=25
= 0 to +70
Input High Voltage
Input Low Voltage
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
2. Dout = disable, 0V
Supply Voltage
Parameter
C
,V
DQ0 ~ DQ15
ADDRESS
CH
TE
DD
CLOCK
UDQM
Pin
=3.3V, f = 1MHz)
C
, Voltage referenced to V
V
IN
V
V
Symbol
DD
OUT
V
V
V
V
V
I
DD
I
,V
OL
OH
IL
OL
IH
IL
+ 0.3V , all other pin are not under test = 0V.
DDQ
V
DD .
Symbol
C
C
C
C
ADD
OUT
CLK
IN
Min.
SS
-0.3
-1.5
3.0
2.0
2.4
-1
-
=0V)
V
V
Symbol
DD
T OPR
IN
I out
T stg
P. 4
P
,V
,V
D
OUT
DDQ
Typ
3.3
3.0
0
-
-
-
-
Min
2.5
2.5
4.0
2.5
Preliminary T4312816A
-55 to +150
V
-1.0 to 4.6
-1.0 to 4.6
0 to +70
DD
Value
Max.
3.6
0.8
0.4
1.5
+0.3V
50
1
-
1
Publication Date: APR. 2003
Max
4.0
5.0
6.5
5.0
Unit
uA
uA
V
V
V
V
V
Revision: 0.B
Unit
I
mA
I
W
OH
Unit
V
V
OL
C
C
pF
pF
pF
pF
Notes
=-4mA
=4mA
1
2