MMBTA42-NL Fairchild Semiconductor, MMBTA42-NL Datasheet - Page 2

• Manufacturer Part Number: MMBTA42-NL
• Description: Mpsa42 / Mmbta42 / Pzta42 Npn High Voltage Amplifier
• Manufacturer: Fairchild Semiconductor

OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
h
V
V
f
C
Symbol
CBO
EBO
T
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
Electrical Characteristics
*
Spice Model
NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2 Isc=0
Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n Itf=5
Vtf=20 Xtf=150 Rb=10)
Typical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
140
120
100
)
)
80
60
40
20
0.1
V = 5V
CE
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
vs Collector Current
I
125 °C
C
DC Current Gain
- COLLECTOR CURRENT (mA)
1
Parameter
25 °C
- 40 °C
10
TA = 25°C unless otherwise noted
100
I
I
I
V
V
I
I
I
I
I
I
f = 100 MHz
V
C
C
E
C
C
C
C
C
C
CB
EB
CB
= 1.0 mA, I
= 100 A, I
= 100 A, I
= 1.0 mA, V
= 10 mA, V
= 30 mA, V
= 20 mA, I
= 20 mA, I
= 10 mA, V
= 200 V, I
= 6.0 V, I
= 20 V, I
Test Conditions
0.25
0.15
0.05
B
B
E
B
C
0.3
0.2
0.1
E
C
CE
CE
CE
E
CE
= 2.0 mA
= 2.0 mA
= 0, f = 1.0 MHz
= 0
= 0
= 0
= 0
= 0
0.1
= 10 V
= 10 V
= 20 V,
= 10 V
Voltage vs Collector Current
Collector-Emitter Saturation
= 10
NPN High Voltage Amplifier
I
C
- COLLECTOR CURRENT (mA)
- 40 °C
1
Min
300
300
6.0
25
40
40
50
10
25 °C
Max
0.1
0.1
0.5
0.9
3.0
125 °C
(continued)
Units
MHz
pF
V
V
V
V
V
100
A
A
3