BULD25 Power Innovations Limited, BULD25 Datasheet - Page 4

• Manufacturer Part Number: BULD25
• Description: NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
• Manufacturer: Power Innovations Limited

BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
P R O D U C T
4
0·01
1·0
0·1
10
5
4
3
2
1
0
1·0
0
BULD25D
T
t
t
t
A
p
p
p
= 100 µs
= 10 ms
=
= 25°C
100
MAXIMUM FORWARD-BIAS
1 s
V
V
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
SAFE OPERATING AREA
CE
CE
200
- Collector-Emitter Voltage - V
- Collector-Emitter Voltage - V
10
I N F O R M A T I O N
300
Figure 4.
Figure 6.
400
MAXIMUM SAFE OPERATING REGIONS
500
100
BULD25D
I
V
T
B(on)
600
BE(off)
A
= I
= -5 V
= 25°C
700
LDX25DRB
LDX25DFB
C
/ 5
1000
800
0·01
1·0
0·1
10
5
4
3
2
1
0
1·0
0
BULD25SL
T
t
t
t
p
p
p
A
= 100 µs
= 10 ms
=
= 25°C
100
MAXIMUM FORWARD-BIAS
1 s
V
V
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
SAFE OPERATING AREA
CE
CE
200
- Collector-Emitter Voltage - V
- Collector-Emitter Voltage - V
10
300
Figure 5.
Figure 7.
400
500
100
BULD25SL
I
V
T
B(on)
600
A
BE(off)
= I
= -5 V
= 25°C
700
LDX25SRB
LDX25SFB
C
/ 5
1000
800