BULD25 Power Innovations Limited, BULD25 Datasheet
BULD25
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BULD25 Summary of contents
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... Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. NPN SILICON TRANSISTOR WITH INTEGRATED DIODE device symbol tightly controlled anti-parallel diode. The revolutionary design ensures that the diode rr RATING BULD25D, BULD25DR, BULD25SL JULY 1994 - REVISED SEPTEMBER 1997 D PACKAGE (TOP VIEW ...
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... BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE JULY 1994 - REVISED SEPTEMBER 1997 absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) (continued) Continuous collector current (see Note 1) Peak collector current (see Note 2) Continuous base current (see Note 1) Peak base current (see Note 2) Continuous device dissipation at (or below) 25° ...
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... BASE-EMITTER SATURATION VOLTAGE vs AMBIENT TEMPERATURE 1.0 0.9 0.8 0.7 0.6 -50 - Ambient Temperature - °C A Figure 3. BULD25D, BULD25DR, BULD25SL JULY 1994 - REVISED SEPTEMBER 1997 ANTI-PARALLEL DIODE 25°C A 0·5 1·0 1·5 2· Instantaneous Forward Voltage - V EC Figure 2. LDX25SVB 100 ...
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... BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE JULY 1994 - REVISED SEPTEMBER 1997 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 BULD25D T = 25°C A 1·0 0· 100 µ 0·01 1· Collector-Emitter Voltage - V CE Figure 4. MAXIMUM REVERSE-BIAS ...
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... Figure 8. THERMAL RESPONSE JUNCTION TO AMBIENT vs POWER PULSE DURATION duty cycle = t1/t2 Read time at end of t1, T – J max - Power Pulse Duration - s Figure 9. BULD25D, BULD25DR, BULD25SL JULY 1994 - REVISED SEPTEMBER 1997 LDX25DZA BULD25D T = 25° peak ...
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... BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE JULY 1994 - REVISED SEPTEMBER 1997 MAXIMUM POWER DISSIPATION JUNCTION TO AMBIENT 100 10 10% 20% 40% 60% 1·0 0· MAXIMUM POWER DISSIPATION JUNCTION TO AMBIENT 100 10% 10 20% 40% 60% 1· ...
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... BULD25 R E Figure 12. COMPONENT VALUES USED IN FUNCTIONAL TEST CIRCUIT 1 470 load coupling C 1.5 nF slew C 3.2 nF filter L1 2 Figure 13. BULD25D, BULD25DR, BULD25SL JULY 1994 - REVISED SEPTEMBER 1997 C R load filter C coupling IDDATBAL 7 ...
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... BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE JULY 1994 - REVISED SEPTEMBER 1997 FUNCTIONAL TEST SWITCHING WAVEFORMS V CE BASE CURRENT CO LLE CTOR DIODE CURRENT Figure 14. Switching Waveforms of device in Functional Test Circuit ...
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... Places Pin Spacing 0,229 (0.0090) 1,27 (0.050) 0,190 (0.0075) (see Note A) 6 Places BULD25D, BULD25DR, BULD25SL JULY 1994 - REVISED SEPTEMBER 1997 Designation per JEDEC Std 30: PDSO-G8 5,21 (0.205) 4,60 (0.181) 7° NOM 4 Places 1,12 (0.044) 0,51 (0.020) 4° ± 4° MDXXAA ...
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... BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE JULY 1994 - REVISED SEPTEMBER 1997 SL003 3-pin plastic single-in-line package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions ...
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... NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MECHANICAL DATA 4,10 1,60 3,90 1,50 2,05 1,95 ø 1,5 MIN. Direction of Feed ALL LINEAR DIMENSIONS IN MILLIMETERS 330 +0,0/-4,0 mm 100 ±2,0 mm 13,0 ±0,2 mm BULD25D, BULD25DR, BULD25SL JULY 1994 - REVISED SEPTEMBER 1997 0,40 0,8 MIN. 5,55 5,45 12,30 11,70 0 MIN. 2,2 2,0 Cover Tape MDXXAT 11 ...
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... BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE JULY 1994 - REVISED SEPTEMBER 1997 Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current ...