BULD25 Power Innovations Limited, BULD25 Datasheet - Page 3

• Manufacturer Part Number: BULD25
• Description: NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
• Manufacturer: Power Innovations Limited

P R O D U C T
1·0
30
10
0·01
FORWARD CURRENT TRANSFER RATIO
T
V
V
V
A
CE
CE
CE
= 25°C
= 1.5 V
=
= 10 V
5 V
COLLECTOR CURRENT
I
C
0·1
- Collector Current - A
I N F O R M A T I O N
Figure 1.
vs
1.0
0.9
0.8
0.7
0.6
1·0
-50
BASE-EMITTER SATURATION VOLTAGE
TYPICAL CHARACTERISTICS
-25
LDX25SHF
AMBIENT TEMPERATURE
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
T
A
0
- Ambient Temperature - °C
10
Figure 3.
25
vs
50
0·01
1·0
0·1
10
75
0
INSTANTANEOUS FORWARD CURRENT
INSTANTANEOUS FORWARD VOLTAGE
T
A
100
= 25°C
V
EC
0·5
I
I
C
B
BULD25D, BULD25DR, BULD25SL
- Instantaneous Forward Voltage - V
= 0.5 A
= 0.1 A
125
ANTI-PARALLEL DIODE
LDX25SVB
1·0
150
JULY 1994 - REVISED SEPTEMBER 1997
Figure 2.
vs
1·5
2·0
2·5
LDX25DVF
3·0
3