PDTB113E NXP Semiconductors, PDTB113E Datasheet - Page 4

• Manufacturer Part Number: PDTB113E
• Description: PNP 500mA 50V resistor-equipped transistors
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PDTB113E_SER_2
Product data sheet
Table 7.
[1]
Table 8.
T
Symbol
R
Symbol Parameter
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
th(j-a)
c
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
= 25
°
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input
voltage
on-state input
voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance V
C unless otherwise specified.
Thermal characteristics
Characteristics
Parameter
thermal resistance
from junction to
ambient
SOT346
SOT54
SOT23
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
Rev. 02 — 16 November 2009
Conditions
V
V
V
V
V
I
V
V
I
f = 100 MHz
C
C
CB
CB
CE
EB
CE
CE
CE
CB
= −50 mA; I
= −20 mA
= −5 V; I
= −40 V; I
= −50 V; I
= −50 V; I
= −5 V; I
= −5 V; I
= −0.3 V;
= −10 V; I
Conditions
in free air
C
C
C
E
E
E
B
B
= 0 A
= −50 mA
= −100 μA
= i
= −2.5 mA
= 0 A
= 0 A
= 0 A
e
= 0 A;
PDTB113E series
[1]
Min
-
-
-
Min
-
-
-
-
33
-
−0.6
−1.0
0.7
0.9
-
Typ
-
-
-
w w w . D a t a S h e e t 4 U . c o m
Typ
-
-
-
-
-
-
−1.1
−1.4
1.0
1.0
11
© NXP B.V. 2009. All rights reserved.
Max
500
250
500
Max
−100
−100
−0.5
−4.0
-
−0.3
−1.5
−1.8
1.3
1.1
-
K/W
K/W
K/W
Unit
Unit
nA
nA
μA
mA
mV
V
V
kΩ
pF
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