PDTB113E NXP Semiconductors, PDTB113E Datasheet - Page 3

• Manufacturer Part Number: PDTB113E
• Description: PNP 500mA 50V resistor-equipped transistors
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
PDTB113E_SER_2
Product data sheet
Table 4.
[1]
Table 5.
[1]
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Type number
PDTB113EK
PDTB113ES
PDTB113ET
Type number
PDTB113EK
PDTB113ES
PDTB113ET
Symbol
V
V
V
V
I
P
T
T
T
O
stg
j
amb
CBO
CEO
EBO
I
tot
Also available in SOT54A and SOT54 variant packages (see
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Ordering information
Marking codes
Limiting values
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
positive
negative
SOT346
SOT54
SOT23
Package
Name
SC-59A
SC-43A
-
PNP 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
Rev. 02 — 16 November 2009
Description
plastic surface mounted package; 3 leads
plastic single-ended leaded (through hole) package;
3 leads
plastic surface mounted package; 3 leads
Conditions
open emitter
open base
open collector
T
amb
≤ 25 °C
Marking code
E4
B113ES
*7U
PDTB113E series
Section 2
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
−65
-
−65
and
Section
www.DataSheet4U.com
Max
−50
−50
−10
+10
−10
−500
250
500
250
+150
150
+150
© NXP B.V. 2009. All rights reserved.
9).
Version
SOT346
SOT54
SOT23
Unit
V
V
V
V
V
mA
mW
mW
mW
°C
°C
°C
3 of 10