IRG7PH35U-EP International Rectifier Corp., IRG7PH35U-EP Datasheet - Page 6

• Manufacturer Part Number: IRG7PH35U-EP
• Description: Insulated Gate Bipolar Transistor
• Manufacturer: International Rectifier Corp.

IRG7PH35UPbF/IRG7PH35U-EP
6
Fig. 18 - Typical Gate Charge vs. V
16
14
12
10
8
6
4
2
0
0
0.001
0.01
0.1
1
1E-006
I
CE
20
Q G , Total Gate Charge (nC)
= 20A; L = 2.4mH
V CES = 600V
V CES = 400V
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case
D = 0.50
40
0.10
0.02
0.20
0.05
0.01
SINGLE PULSE
( THERMAL RESPONSE )
60
1E-005
80
GE
100
t 1 , Rectangular Pulse Duration (sec)
0.0001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
i/Ri
R
1
R
1
τ
2
0.001
R
τ
2
2
R
1.0
0.8
0.6
0.4
2
25
Fig. 19 - Typical Gate Threshold Voltage
R
τ
(Normalized) vs. Junction Temperature
3
3
R
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
50
τ
R
4
τ
4
R
4
4
T J , Temperature (°C)
τ
C
τ
75
Ri (°C/W)
0.01
0.017
0.218
0.299
0.177
100
0.000013
0.000141
0.002184
0.013107
τi (sec)
125
I C = 600μA
150
0.1
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