IRG7PH35U-EP International Rectifier Corp., IRG7PH35U-EP Datasheet

IRG7PH35U-EP

Manufacturer Part Number

IRG7PH35U-EP

Description

Insulated Gate Bipolar Transistor

Manufacturer

International Rectifier Corp.

Datasheet

1.IRG7PH35U-EP.pdf (10 pages)

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INSULATED GATE BIPOLAR TRANSISTOR

Features

• Low V

• Low switching losses

• Maximum junction temperature 175 °C

• Square RBSOA

• 100% of the parts tested for I

• Positive V

• Tight parameter distribution

• Lead -Free

Benefits

• High efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due to

• Rugged transient performance for increased reliability

• Excellent current sharing in parallel operation

Applications

• U.P.S

• Welding

• Solar inverter

• Induction heating

Absolute Maximum Ratings

Thermal Resistance

NOMINAL

STG

CES

θJC

θCS

θJA

low V

@ T

(IGBT)

= 25°C

= 100°C

CE (ON)

= 25°C

= 100°C

CE (ON)

and low switching losses

trench IGBT technology

Collector-to-Emitter Voltage

Continuous Collector Current

Nominal Current

Pulse Collector Current, V

Clamped Inductive Load Current, V

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

Thermal Resistance Junction-to-Case-(each IGBT)

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

temperature co-efficient

=15V

Parameter

=20V

n-channel

Gate

IRG7PH35UPbF

TO-247AC

Min.

300 (0.063 in. (1.6mm) from case)

–––

G C

IRG7PH35UPbF

IRG7PH35U-EP

10 lbf·in (1.1 N·m)

Collector

-55 to +175

Max.

Typ.

1200

0.24

±30

210

105

–––

CE(on)

IRG7PH35U-EP

J(max)

NOMINAL

CES

TO-247AD

Max.

typ. = 1.9V

= 1200V

0.70

Emitter

–––

= 175°C

G C

= 20A

www.irf.com

PD -

Units

3/26/10

°C/W

97479

°C

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