IRG7PH35U-EP International Rectifier Corp., IRG7PH35U-EP Datasheet - Page 3

• Manufacturer Part Number: IRG7PH35U-EP
• Description: Insulated Gate Bipolar Transistor
• Manufacturer: International Rectifier Corp.

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Fig. 2 - Maximum DC Collector Current vs.
100
0.1
10
60
50
40
30
20
10
0
1
T
25
45
40
35
30
25
20
15
10
1
C
5
0
= 25°C, T
0.1
Fig. 4 - Forward SOA
Square Wave:
50
Case Temperature
10
V
75
J
CC
≤
Diode as specified
I
175°C; V
T C (°C)
V CE (V)
100
100
125
GE
1000
Fig. 1 - Typical Load Current vs. Frequency
=15V
150
10 μs
1ms
100 μs
DC
1
10000
175
(Load Current = I
IRG7PH35UPbF/IRG7PH35U-EP
f , Frequency ( kHz )
RMS
of fundamental)
1000
250
200
150
100
100
50
10
0
Fig. 3- Power Dissipation vs. Case
1
10
10
0
Fig. 5 - Reverse Bias SOA
T
25
J
= 175°C; V
For both:
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Gate drive as specified
Power Dissipation = 70W
Temperature
50
100
V CE (V)
75
T C (°C)
GE
100
= 20V
1000
125
100
150
10000
175
3