IRG7PH35U-EP International Rectifier Corp., IRG7PH35U-EP Datasheet - Page 2

• Manufacturer Part Number: IRG7PH35U-EP
• Description: Insulated Gate Bipolar Transistor
• Manufacturer: International Rectifier Corp.

IRG7PH35UPbF/IRG7PH35U-EP
Notes:
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‚
ƒ
„
Electrical Characteristics @ T
V
ΔV
V
V
ΔV
gfe
I
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
(BR)CES
CE(on)
GE(th)
on
off
total
on
off
total
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
V
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
R
2
CC
θ
is measured at
/ΔTJ
= 80% (V
/ΔT
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
CES
), V
J
GE
= 20V, R
Parameter
Parameter
G
=
J
10Ω.
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
(BR)CES
safely.
Min.
1200
Min.
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ.
2000
Typ.
1060
1680
1880
1140
3020
1940
620
160
200
200
1.2
1.9
2.3
2.4
-16
2.0
22
85
15
35
30
15
80
25
20
60
40
—
—
—
Max.
Max.
1300
2150
±100
100
130
850
180
105
2.2
6.0
50
50
30
—
—
—
—
—
—
—
20
—
—
—
—
—
—
—
—
—
—
mV/°C V
Units
Units
V/°C
nC
μA
nA
pF
μJ
ns
μJ
ns
V
V
V
S
Energy losses include tail & diode reverse recovery
Energy losses include tail & diode reverse recovery
V
V
I
I
I
V
V
V
V
V
I
V
V
I
R
Diode clamp the same as IRG7PH35UDPbF
I
R
Diode clamp the same as IRG7PH35UDPbF
V
V
f = 1.0Mhz
T
V
Rg = 10Ω, V
C
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
CC
J
CC
G
G
= 20A, V
= 20A, V
= 20A, V
= 20A
= 20A, V
= 20A, V
=10Ω, L=200uH, L
= 175°C, I
= 10Ω, L = 200uH, L
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±30V
= 15V
= 600V
= 0V
= 30V
= 960V, Vp =1200V
Conditions
GE
GE
, I
, I
C
C
GE
GE
GE
CC
CC
C
C
CE
CE
C
GE
= 250μA
= 1mA (25°C-150°C)
C
= 600μA
= 600μA (25°C - 150°C)
= 15V, T
= 15V, T
= 15V, T
= 20A, PW = 30μs
= 600V, V
= 600V, V
= 1200V
= 1200V, T
= 80A
= +20V to 0V
Conditions
S
=150nH, T
J
J
J
= 25°C
= 150°C
= 175°C
GE
S
GE
= 150nH, T
J
=15V
= 15V
= 175°C
J
= 175°C
www.irf.com
J
= 25°C
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