RF1S4N100SM Intersil Corporation, RF1S4N100SM Datasheet - Page 4

• Manufacturer Part Number: RF1S4N100SM
• Description: 4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs
• Manufacturer: Intersil Corporation

Typical Performance Curves
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
3000
2500
2000
1500
1000
5
4
3
2
1
0
500
3.0
2.5
2.0
1.5
1.0
0.5
0
0
-50
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
1
DS
V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
FIGURE 7. TRANSFER CHARACTERISTICS
GS
= 15V
= 10V, I
RESISTANCE vs JUNCTION TEMPERATURE
C
C
C
ISS
OSS
RSS
V
V
GS
T
2
DS
D
J
, GATE TO SOURCE VOLTAGE (V)
0
, JUNCTION TEMPERATURE (
= 4.3A
, DRAIN TO SOURCE VOLTAGE (V)
150
4-531
o
C
50
4
10
25
o
C
V
C
C
C
T
GS
ISS
RSS
OSS
C
100
= 25
o
6
= 0V, f = 1MHz
= C
RFP4N100, RF1S4N100SM
C)
= C
C
GS
o
GD
DS
C, Unless Otherwise Specified (Continued)
+ C
+ C
GD
GD
150
100
8
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 12. DRAIN CURRENT vs SOURCE TO DRAIN DIODE
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
100
0.1
10
1.3
1.2
1.1
1.0
0.9
0.8
1
6
5
4
3
2
1
0
0
0
I
V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
D
GS
= 250 A
-40
= 10V
CURRENT
VOLTAGE vs JUNCTION TEMPERATURE
VOLTAGE
2
0.3
V
T
SD
J
, JUNCTION TEMPERATURE (
, SOURCE TO DRAIN VOLTAGE (V)
0
I
D
4
, DRAIN CURRENT (A)
T
J
0.6
= 150
40
o
6
C
0.9
80
8
T
J
o
= 25
C)
1.2
120
o
10
C
160
1.5
12