RF1S4N100SM Intersil Corporation, RF1S4N100SM Datasheet - Page 3

• Manufacturer Part Number: RF1S4N100SM
• Description: 4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs
• Manufacturer: Intersil Corporation

Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
10
0.01
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
8
6
4
2
0
0.1
10
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
0
1
0
1
RFP4N100, RF1S4N100SM
T
T
SINGLE PULSE
C
J
V
= MAX RATED
FIGURE 5. OUTPUT CHARACTERISTICS
GS
= 25
TEMPERATURE
= 10V
o
100
25
C
V
V
DS
DS
T
, DRAIN TO SOURCE VOLTAGE (V)
A
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
, AMBIENT TEMPERATURE (
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
10
50
200
4-530
DS(ON)
75
300
V
V
V
GS
GS
GS
100
100
= 6V
= 5V
= 4V
T
C
o
= 25
C)
RFP4N100, RF1S4N100SM
400
125
o
C, Unless Otherwise Specified
100 s
10ms
10 s
1ms
DC
1000
150
500
10
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
8
6
4
2
0
Idm
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA
100
0
0
10
1
25
0.01
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
FIGURE 6. SATURATION CHARACTERISTICS
IF R = 0
t
IF R
t
av
av
= (L)(I
= (L/R) In ((I
CASE TEMPERATURE
0
10
V
as
50
DS
) / (1.3 x RATED BV
, DRAIN TO SOURCE VOLTAGE (V)
T
t
AV
C
as
, CASE TEMPERATURE (
, TIME IN AVALANCHE (ms)
0.10
x R) / (1.3 x RATED BV
20
75
STARTING T
STARTING T
V
GS
DSS
= 10V
100
30
- V
J
J
DD
= 25
= 150
1
DSS
)
o
C)
o
C
o
- V
C
125
40
DD
V
V
V
GS
GS
GS
) + 1)
= 6V
= 5V
= 4V
150
10
50