RF1S4N100SM Intersil Corporation, RF1S4N100SM Datasheet - Page 2

• Manufacturer Part Number: RF1S4N100SM
• Description: 4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs
• Manufacturer: Intersil Corporation

Absolute Maximum Ratings
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (R
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage
Reverse Recovery Time
1. T
2. Pulse test: pulse width
3. Repetitive rating: pulse width limited by maximum junction temperature.
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
= 25
o
C to 125
PARAMETER
PARAMETER
o
C.
GS
= 20k
4-529
80 s, duty cycle
T
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
C
= 25
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
SYMBOL
V
Q
r
V
o
BV
t
2%.
DS(ON)
t
d(OFF)
C, Unless Otherwise Specified
GS(TH)
t
R
I
I
d(ON)
R
SD
g(TOT)
rr
DSS
GSS
DSS
t
t
r
RFP4N100, RF1S4N100SM
f
JC
JA
I
I
SD
SD
I
V
V
V
V
I
V
R
V
(Figure 13)
D
D
GS
DS
DS
GS
DD
GS
L
= 250 A, V
= 2.5A, V
= 4.3A
= 3.9A, dI
= 120 )
= V
= 1000V, V
= 800V, V
= 20V
= 500V, I
= 20V, I
DS
TEST CONDITIONS
, I
GS
SD
D
D
TEST CONDITIONS
GS
D
GS
= 3.9A, V
= 250 A
/dt = 100A/ s
= 10V (Figures 8, 9)
GS
= 0V (Figure 10)
3.9A, R
= 0V, T
= 0V
DS
GS
C
= 800V
= 150
= 9.1
J
, T
o
DGR
C
STG
pkg
DM
GS
DS
AS
D
D
L
(See UIS SOA Curve)
(Figures 4, 14, 15)
MIN
RF1S4N100SM
-
-
RFP4N100,
1000
-55 to 150
MIN
2
-
-
-
-
-
-
-
-
-
-
-
1000
1000
150
300
260
4.3
1.2
17
20
TYP
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
1000
3.500
1.8
MAX
0.83
100
170
120
25
100
30
50
50
62
4
-
UNITS
W/
mJ
o
o
o
W
V
V
A
A
V
UNITS
C
C
C
o
UNITS
C
o
o
C/W
C/W
ns
nA
nC
ns
ns
ns
ns
V
V
V
A
A