RF1S4N100SM Intersil Corporation, RF1S4N100SM Datasheet

RF1S4N100SM

Manufacturer Part Number

RF1S4N100SM

Description

4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs

Manufacturer

Intersil Corporation

Datasheet

1.RF1S4N100SM.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

RF1S4N100SM

Manufacturer:

KA/INTRISII

Quantity:

12 500

Current page: 1 of 6
Download datasheet (46Kb)

4.3A, 1000V, 3.500 Ohm, High Voltage,

N-Channel Power MOSFETs

The RFP4N100 and RFP4N100SM are N-Channel

enhancement mode silicon gate power field effect

transistors. They are designed for use in applications such

as switching regulators, switching converters, motor

drivers, relay drivers, and drivers for high power bipolar

switching transistors requiring high speed and low gate

drive power. This type can be operated directly from an

integrated circuit.

Formerly developmental type TA09850.

Ordering Information

NOTE: When ordering, use the entire part number.

Packaging

RFP4N100

RF1S4N100SM

PART NUMBER

DRAIN (FLANGE)

TO-220AB

TO-263AB

JEDEC TO-220AB

PACKAGE

4-528

Data Sheet

RFP4N100

F1S4N100

SOURCE

DRAIN

CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures.

BRAND

GATE

http://www.intersil.com or 407-727-9207

Features

• 4.3A, 1000V

• r

• UIS Rating Curve (Single Pulse)

• -55

• Related Literature

Symbol

- TB334 “Guidelines for Soldering Surface Mount

DS(ON)

Components to PC Boards”

C to 150

RFP4N100, RF1S4N100SM

August 1999

= 3.500

SOURCE

GATE

C Operating Temperature

JEDEC TO-263AB

File Number 2457.4

(FLANGE)

DRAIN

Intersil Corporation 1999

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